 English |
|
|
|
|
|
|
|
| FZT955 Datasheet, PDF (2/5 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |||
| |||
| ◁ |
FZT955
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -180 -210
Voltage
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER -180 -210
V IC=-1µA, RB â¤1kâ¦
Collector-Emitter
Breakdown Voltage
V(BR)CEO -140 -170
V IC=-10mA*
Emitter-Base Breakdown
V(BR)EBO -6
-8
Voltage
V IE=-100µA
Collector Cut-Off Current
ICBO
-50 nA VCB=-150V
-1
µA VCB=-150V,Tamb=100°C
Collector Cut-Off Current
ICER
R â¤1kâ¦
-50 nA VCB=-150V
-1
µA VCB=-150V,Tamb=100°C
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
-30
-70
-110
-275
-970
-10 nA
-60 mV
-120 mV
-150 mV
-370 mV
-1110 mV
VEB=-6V
IC=-100mA, IB=-5mA*
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
IC=-3A, IB=-300mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-830 -950 mV I+=-3A, VCE=-5V*
Static Forward
hFE
100 200
Current Transfer Ratio
100 200 300
75 140
10
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-10A, VCE=-5V*
Transition Frequency
fT
110
MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
40
pF
Switching Times
ton
toff
68
ns
1030
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VCB=-20V, f=1MHz
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
3 - 285
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese