FZT788B Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT788B
TYPICAL CHARACTERISTICS
1.8
IC/IB=200
1.6
IC/IB=100
IC/IB=10
1.4
1.2
Tamb=25°C
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VCE(sat) v IC
1.8
-55°C
1.6
+25°C
+100°C
1.4
+175°C
1.2
IC/IB=200
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VCE(sat) v IC
+100°C
1.6
+25°C
1.4
-55°C
1.2
1.0
0.8
0.6
0.4
0.2
00
0.01
0.1
VCE=2V ₁₂₀₀
900
600
300
1
10
I+ - Collector Current (Amps)
hFE v IC
-55°C
1.6
+25°C
+100°C
1.4
+175°C
1.2
1.0
0.8
0.6
0.4
0.2
IC/IB=200
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VBE(sat) v IC
-55°C
1.6
+25°C
+100°C
1.4
VCE=2V
1.2
1.0
0.8
0.6
0.4
0.2
00
0.01
0.1
1
10
I+ - Collector Current (Amps)
VBE(on) v IC
10
1
DC
1s
0.1
100ms
10ms
1ms
100µs
0.01
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 245