FZT696B Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT696B
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
0.2
IC/IB=100
IC/IB=50
IC/IB=10
Tamb=25°C
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VCE(sat) v IC
-55°C
+25°C
0.8
+100°C
+175°C
0.6
IC/IB=50
0.4
0.2
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VCE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
+100°C
+25°C
-55°C
VCE=5V
1.5K
1K
500
0.01
0.1
1
10
I+ - Collector Current (Amps)
hFE v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-55°C
+25°C
+100°C
+175°C
IC/IB=50
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
VBE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
-55°C
+25°C
+100°C
+175°C
VCE=5V
0.01
0.1
1
10
I+ - Collector Current (Amps)
VBE(on) v IC
1
0.1
0.01
DC
1s
100ms
10ms
1ms
100µs
0.001
1V
10V
100V
1000V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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