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| FZT1048A Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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FZT1048A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown V(BR)CBO 50
85
Voltage
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
50
85
V
IC=100µA*
Collector-Emitter
Breakdown Voltage
VCEO
17.5
24
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
50
85
V
IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO 5
8.7
Voltage
V
IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
ICBO
IEBO
ICES
0.3
10
0.3
10
0.3
10
nA
VCB=35V
nA
VEB=4V
nA
VCE=35V
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
27
45
mV
IC=0.5A, IB=10mA*
55
75
mV
IC=1A, IB=10mA*
155
210
mV
IC=3A, IB=15mA*
250
350
mV
IC=5A, IB=25mA*
920
1000 mV
IC=5A, IB=25mA*
Base-Emitter Turn-On
Voltage
VBE(on)
880
970
mV
IC=5A, VCE=2V*
Static Forward Current
hFE
Transfer Ratio
Transition Frequency
fT
280
440
300
450
300
450
1200
180
300
50
80
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=20A, VCE=2V*
150
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Switching Times
Cobo
ton
60
80
pF
VCB=10V, f=1MHz
120
ns
IC=4A, IB=40mA, VCC=10V
toff
310
ns
IC=4A, IB=40mA, VCC=10V
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