FXT690B Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FXT690B
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX.
Transition Frequency
f_T
150
UNIT
MHz
Input Capacitance
C_ibo
200
pF
Output Capacitance
C_obo
16
pF
Switching Times
t_on
t_off
33
ns
1300
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
CONDITIONS.
I_C=50mA, V_CE=5V
f=50MHz
V_EB=0.5V, f=1MHz
V_CB=10V, f=1MHz
I_C=500mA, I_B!=50mA
I_B2=50mA, V_CC=10V
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient₁
Junction to Ambient₂
Junction to Case
R_th(j-amb)1
R_th(j-amb)2 †
R_th(j-case)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat ^{steemtemppeerraattuurree}
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
D=1 (D.C.)
t1 _D=t1/tP
100
tP
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-53