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| FMMTL718 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR | |||
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FMMTL718
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-20
-65
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-20 -55
Emitter-Base
V(BR)EBO
-5
-8.8
Breakdown Voltage
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Cut-Off Current ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
-10
-10
-10
-33
-50
-130 -180
-230 -320
-315 -450
Base-Emitter
Saturation Voltage
VBE(sat)
-950 -1100
Base-Emitter
Turn On Voltage
VBE(on)
-850 -1000
Static Forward
hFE
Current Transfer Ratio
300 500
300 450
200 320
120 200
50
80
Transition Frequency
fT
265
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
Collector-Base
Breakdown Voltage
Cobo
9
12
pF
Switching times
ton
toff
108
ns
121
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
CONDITIONS.
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-15V
VEB=-4V
VCE=-15V
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-1.5A,IB=-100mA
IC=-1.25A, IB=-100mA*
IC=-1.25A, VCE=-2V*
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-1.5A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
IC=-1A, VCC=-10V
IB1=IB2=-10mA
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