 English |
|
|
|
|
|
|
|
| FMMTL717 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR | |||
| |||
| ◁ |
FMMTL717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-12
-35
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-12 -25
Emitter-Base
V(BR)EBO
-5
-8.5
Breakdown Voltage
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Cut-Off Current ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
-10
-10
-10
-24
-40
-94
-140
-160 -240
-200 -290
Base-Emitter
Saturation Voltage
VBE(sat)
-970 -1100
Base-Emitter
Turn On Voltage
VBE(on)
-875 -1000
Static Forward
hFE
Current Transfer Ratio
300 490
300 450
180 275
100 180
50
110
Transition Frequency
fT
205
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
Collector-Base
Breakdown Voltage
Cobo
15
20
pF
Switching times
ton
toff
76
ns
149
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
CONDITIONS.
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-10V
VEB=-4V
VCE=-10V
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-1.25A,IB=-50mA
IC=-1.25A, IB=-50mA*
IC=-1.25A, VCE=-2V*
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
IC=-1A, VCC=-10V
IB1=IB2=-10mA
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese