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| FMMTL619_05 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR | |||
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FMMTL619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
100
210
Collector-Emitter
Breakdown Voltage
V(BR)CEO
50
70
Emitter-Base
V(BR)EBO
5
8.5
Breakdown Voltage
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Cut-Off Current ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
10
10
10
24
45
60
100
100 180
195 330
Base-Emitter
Saturation Voltage
VBE(sat)
1020 1100
Base-Emitter
Turn On Voltage
VBE(on)
895 1000
Static Forward
hFE
Current Transfer Ratio
200 400
300 450
200 400
100 230
30
50
Transition Frequency
fT
180
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
Collector-Base
Breakdown Voltage
Cobo
6
8
pF
Switching times
ton
toff
182
ns
379
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
CONDITIONS.
IC=100µA
IC=5mA*
IE=100µA
VCB=40V
VEB=4V
VCE=40V
IC=100mA, IB=10mA*
IC=250mA, IB=10mA*
IC=500mA, IB=25mA*
IC=1.25A, IB=125mA*
IC=1.25A, IB=125mA*
IC=1.25A, VCE=2V*
IC=10mA, VCE=5V
IC=200mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
IC=50mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
IC=1A, VCC=10V
IB1=-IB2=10mA
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