FMMT717 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – SILICON POWER (SWITCHING) TRANSISTORS

FMMT722
FMMT723
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT722
FMMT723
MIN. TYP. MAX. MIN. TYP. MAX. ^{UNIT CONDITIONS.}
Collector-Base
V(BR) CBO
Breakdown Voltage
-70 -150
-100 -200
V
IC =-100µA
Collector-Emitter
V(BR) CEO
Breakdown Voltage
-70 -125
-100 -160
V
IC =-10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
-5 -8.8
-5 -8.8
V
IE=-100µA
Collector Cut-Off
IC BO
Current
-100
nA
-100 nA
VC B=-60V
VC B=-80V
Emitter Cut-Off
IEBO
Current
-100
-100 nA VEB=-4V
Collector Emitter ICES
Cut-Off Current
-100
nA
-100 nA
VC ES=-60V
VC ES=-80V
Collector-Emitter
VC E( sat)
Saturation Voltage
-35 -50
-135 -200
-140 -220
-175 -260
-50 -80 mV IC=-0.1A, IB=-10mA*
mV IC=-0.5A, IB=-20mA*
-125 -200 mV IC=-0.5A, IB=-50mA*
mV IC=-1A, IB=-100mA*
-210 -330 mV IC=-1A, IB=-150mA*
mV IC=-1.5A, IB=-200mA*
Base-Emitter
VBE( sat)
Saturation Voltage
-0.94 -1.05
-0.89 -1.0 V
IC=-1A, IB=-150mA*
IC=-1.5A, IB=-200mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.78 -1.0
-0.71 -1.0 V
IC=-1A, VCE=-10V*
IC=-1.5A, VCE=-5V*
Static Forward
hFE
Current Transfer
Ratio
300 470
300 450
175 275
40 60
10
300 475
300 450
250 375
250
30
IC=-10mA, VCE=-5V*
IC=-10mA, VCE=-10V*
IC=-0.1A, VCE=-5V*
IC=-0.1A, VCE=-10V*
IC=-0.5A, VCE=-10V*
IC=-1A, VCE=-5V*
IC=-1A, VCE=-10V*
IC=-1.5A, VCE=-5V*
IC=-1.5A, VCE=-10V*
IC=-3A, VCE=-5V*
Transition
fT
Frequency
150 200
150 200
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
14 20
13 20 pF
Turn-On Time
t(on)
40
50
ns
Turn-Off Time
t(off)
700
760
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VCB=-10V, f=1MHz
VCC=-50V, IC=-0.5A
IB1 =IB2 =-50mA
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