FMMT617 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTORS

FMMT624
FMMT625
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT624
FMMT625
MIN. TYP. MAX. MIN. TYP. MAX. ^{UNIT CONDITIONS.}
Collector-Base
V(BR)CBO
Breakdown Voltage
125 250
150 300
V
IC=100µA
Collector-Emitter
V(BR)CEO
Breakdown Voltage
125 160
150 175
V
IC=10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
5 8.3
5
8.3
V
IE=100µA
Collector Cut-Off
ICBO
Current
100
nA VCB=100V
100 nA VCB=130V
Emitter Cut-Off
IEBO
Current
100
100 nA VEB=4V
Collector Emitter
ICES
Cut-Off Current
100
nA VCES=100V
100 nA VCES=130V
Collector-Emitter
VCE(SAT)
Saturation Voltage
26 50
70 150
160 220
165 250
26 50 mV IC=0.1A, IB=10mA*
110 200 mV IC=0.1A, IB=1mA*
mV IC=0.5A, IB=50mA*
mV IC=0.5A, IB=10mA*
180 300 mV IC=1A, IB=50mA*
Base-Emitter
VBE(SAT)
Saturation Voltage
0.85 1.0
0.85 1.0 V
IC=1A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(ON)
0.7 1.0
0.74 1.0 V
IC=1A, VCE=10V*
Static Forward
hFE
Current Transfer
Ratio
200 400
300 450
100 140
18
200 400
300 450
30 45
15
IC=10mA, VCE=10V*
IC=0.2A, VCE=10V*
IC=1A, VCE=10V*
IC=3A, VCE=10V*
Transition
fT
Frequency
100 155
100 135
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance COBO
7
15
6
10 pF VCB=10V, f=1MHz
Turn-On Time
t(ON)
60
160
ns
Turn-Off Time
t(OFF)
1300
1500
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VCC=50V, IC=0.5A
IB1=-IB2=50mA
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