FMMT497_06 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – SOT23 NPN silicon planar high voltage high performance transistor

FMMT497
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
turn on voltage
Static forward current
transfer ratio
Transition frequency
output capacitance
Switching performance
Symbol
V_(BR)CBO
Min.
300
Typ.
Max
.
Unit Conditions
V I_C = 100␮A
V_CEO(sus) 300
V_(BR)EBO
5
V _{IC = 10mA} ^(*)
V I_E = 100␮A
I_CBO
I_CES
I_EBO
V_CE(sat)
V_BE(sat)
100 nA V_CB = 250V
100 nA V_CES = 250V
100 nA V_EB = 4V
0.2
V I_C = 100mA, I_B = 10mA
0.3
V _{IC = 250mA, IB = 25mA}
1.0
V I_C = 250mA, I_B = 25mA
V_BE(on)
1.0
V I_C = 250mA, V_CE = 10V
h_FE
f_T
C_obo
td
tr
ts
tf
100
I_C = 1mA, V_CE = 10V
80
20
300
I_C = 100mA, V_CE = 10V^(*)
I_C = 250mA, V_CE = 10V^(*)
75
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
5
pF V_CB = 10V, f = 1MHz
53
ns V_CC = 100V, I_C = 100mA,
126
ns ^{Ib1 = -Ib2 = 10mA}
2.58
␮s
228
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle Յ2%.
Issue 4 - November 2006
2
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