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| ZXTN25012EFL Datasheet, PDF (1/8 Pages) Zetex Semiconductors – 12V, SOT23, NPN low power transistor | |||
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ZXTN25012EFL
12V, SOT23, NPN low power transistor
Summary
BVCEO > 12V
BVECO > 4.5V
hFE > 500
IC(cont) = 2A
VCE(sat) < 65 mV @ 1A
RCE(sat) = 46 mâ
PD = 350mW
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
⢠High peak current
⢠Low saturation voltage
⢠6V reverse blocking voltage
Applications
⢠MOSFET and IGBT gate driving
⢠DC-DC conversion
⢠LED driving
⢠Interface between low voltage IC's and load
Ordering information
Device
ZXTN25012EFLTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1B6
C
B
E
E
C
B
Pinout - top view
Issue 2 - January 2007
1
© Zetex Semiconductors plc 2007
www.zetex.com
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