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| ZXMN6A25DN8_06 Datasheet, PDF (1/8 Pages) Zetex Semiconductors – Dual 60V SO8 N-channel enhancement mode MOSFET | |||
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ZXMN6A25DN8
Dual 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) (â)
0.050 @ VGS = 10V
0.070 @ VGS = 4.5V
ID (A)
5
4.2
Description
This new generation trench MOSFET from Zetex
features a unique structure combining the benefits of
low on-resistance and fast switching, making it ideal
for high efficiency power management applications.
G1
Features
⢠Low on-resistance
⢠Fast switching speed
⢠Low gate drive
⢠Low profile SO8 package
Applications
⢠DC - DC converters
⢠Power management functions
⢠Motor control
Ordering information
Device
ZXMN6A25DN8TA
ZXMN6A25DN8TC
Reel
(inches)
7
13
Tape width
(mm)
12
12
Quantity
per reel
500
2500
Device marking
ZXMN
6A25D
D1
D2
G2
S1
S2
S1
D1
G1
D1
S2
D2
G2
D2
Pin out - top view
Issue 4 - November 2006
1
© Zetex Semiconductors plc 2006
www.zetex.com
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