ZXMN6A11G_06 Datasheet, PDF (1/8 Pages) Zetex Semiconductors – 60V SOT223 N-channel enhancement mode MOSFET

ZXMN6A11G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V_(BR)DSS
60
R_DS(on) (⍀)
0.120 @ V_GS= 10V
0.180 @ V_GS= 4.5V
I_D (A)
4.4
3.5
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
D
G
S
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN6A11GTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1,000
S
D
D
G
Pinout - top view
Device marking
ZXMN
6A11
Issue 4 - September 2006
1
© Zetex Semiconductors plc 2006
www.zetex.com