ZXMN6A09DN8_07 Datasheet, PDF (1/8 Pages) Zetex Semiconductors – 60V SO8 N-channel enhancement mode MOSFET

ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
V_(BR)DSS
60
R_DS(on) (⍀)
0.040 @ V_GS= 10V
0.060 @ V_GS= 4.5V
I_D (A)
5.6
4.6
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOIC package
D1
D2
G1
G2
S1
S2
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
S1
D1
G1
D1
S2
D2
G2
D2
Top view
Device
ZXMN6A09DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
Device marking
ZXMN
6A09D
Issue 6 - January 2007
1
© Zetex Semiconductors plc 2007
www.zetex.com