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| ZXMN3F31DN8 Datasheet, PDF (1/8 Pages) Zetex Semiconductors – 30V SO8 dual N-channel enhancement mode MOSFET | |||
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ZXMN3F31DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS
30
RDS(on) (â¦)
0.024 @ VGS= 10V
0.039 @ VGS= 4.5V
ID (A)
7.3
5.7
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
⢠Low on-resistance
⢠4.5V gate drive capability
Applications
⢠DC-DC Converters
⢠Power management functions
⢠Load switching
⢠Motor control
⢠Back lighting
Ordering information
DEVICE
ZXMN3F31DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
G1
Quantity
per reel
500
D1
G2
S1
S1
G1
S2
G2
Device marking
ZXMN
3F31D
D2
S2
D1
D1
D2
D2
Issue 1 - January 2008
1
© Zetex Semiconductors plc 2008
www.zetex.com
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