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| ZXMN2B03E6 Datasheet, PDF (1/8 Pages) Zetex Semiconductors – 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability | |||
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ZXMN2B03E6
20V SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V(BR)DSS
20
RDS(on) (â)
0.040 @ VGS= 4.5V
0.055 @ VGS= 2.5V
0.075 @ VGS= 1.8V
ID (A)
5.4
4.6
4.0
Description
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
Features
⢠Low on-resistance
⢠Fast switching speed
⢠Low gate drive capability
⢠SOT23-6 package
Applications
⢠DC-DC converters
⢠Power management functions
⢠Disconnect switches
D
⢠Motor control
D
Ordering information
Device
G
Reel size Tape width Quantity per reel
(inches)
(mm)
ZXMN2B03E6TA
7
8
3,000
Device marking
2B3
D
G
S
D
D
S
Top view
Issue 1 - September 2006
1
© Zetex Semiconductors plc 2006
www.zetex.com
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