ZXM41N10F Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET

ZXM41N10F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
• BV_DSS = 100V
• Low Threshold
DEVICE MARKING
• 410
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Drain-gate voltage
Continuous drain current at T_amb=25°C
Pulsed drain current
Gate-source voltage
Power dissipation at T_amb=25°C
Operating and storage temperature range
PINOUT TOP VIEW
SYMBOL
V_DS
V_DGR
I_D
I_DM
V_GS
P_tot
T_j:T_stg
VALUE
100
100
170
680
± 20
360
-55 to +150
SOT23
UNIT
V
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Drain-source breakdown voltage BV_DSS 100
Gate-source threshold voltage
V_GS(th) 0.5
Gate-body leakage
I_GSS
Zero gate voltage drain current I_DSS
Static drain-source on-state
resistance ⁽¹⁾
R_DS(on)
Forward transconductance ⁽¹⁾⁽²⁾ g_fs
80
Input capacitance ⁽²⁾
C_iss
25
Common source output
capacitance ⁽²⁾
C_oss
9
Reverse transfer capacitance ⁽²⁾ C_rss
4
Turn-on delay time ⁽²⁾⁽³⁾
t_d(on)
10
Rise time ⁽²⁾⁽³⁾
t_r
10
Turn-off delay time ⁽²⁾⁽³⁾
t_d(off)
15
Fall time ⁽²⁾⁽³⁾
t_f
25
V
I_D=0.25mA, V_GS=0V
1.5
V
I =1mA,
D
V_DS=
V_GS
50
nA
V_GS=±20V, V_DS=0V
500
nA V_DS=100V, V_GS=0V
8
⍀
V_GS=4.5V, I_D=150mA
12
⍀
V_GS=3V, I_D=50mA
mS V_DS=25V, I_D=100mA
pF
pF _{VDS=25V, VGS=0V, f=1MHz}
pF
ns
ns _{VDD ≈30V, ID=280mA}
ns
ns
NOTES:
(1) _{Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test.}
(3) _{Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator}
ISSUE 2 - OCTOBER 2006
1
SEMICONDUCTORS