ZVP2120G Datasheet, PDF (1/3 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995 7
FEATURES
* 200 Volt V_DS
* R_DS(on)=25Ω
ZVP2120G
D
PARTMARKING DETAIL – ZVP2120
COMPLEMENTARY TYPE – ZVN2120G
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
-200
V
Continuous Drain Current at T_amb=25°C
I_D
-200
mA
Pulsed Drain Current
I_DM
-1.2
A
Gate Source Voltage
V_GS
± 20
V
Power Dissipation at T_amb=25°C
P_tot
2
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS -200
V
I_D=-1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th) -1.5 -3.5 V
I_D=-1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
Zero Gate Voltage Drain
I_DSS
Current
-20 nA
-10 µA
-100 µA
V_GS=± 20V, V_DS=0V
V_DS=-200 V, V_GS=0
V_DS=-160 V, V_GS=0V, T=125°C
(2)
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
I_D(on)
R_DS(on)
-300
25
mA V_DS=-25 V, V_GS=-10V
Ω
V_GS=-10V, I_D=-150mA
Forward Transconductance g_fs
50
(1)(2)
mS V_DS=-25V, I_D=-150mA
Input Capacitance (2)
C_iss
Common Source Output
C_oss
Capacitance (2)
100 pF
25 pF
V_DS=-25V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C_rss
t_d(on)
t_r
t_d(off)
t_f
7
pF
7
ns
15
ns
V_DD≈-25V, I_D=-150mA
12 ns
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 431