ZVP2106G Datasheet, PDF (1/3 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 96
FEATURES
* 60 Volt V_DS
* R_DS(on)=5Ω
ZVP2106G
D
PARTMARKING DETAIL: - ZVP2106
COMPLEMENTARY TYPE: - ZVN2106G
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
-60
V
Continuous Drain Current at T_amb=25°C
I_D
-450
mA
Pulsed Drain Current
I_DM
-4
A
Gate Source Voltage
V_GS
± 20
V
Power Dissipation at T_amb=25°C
P_tot
2
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV_DSS -60
V
I_D=-1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th) -1.5 -3.5 V
I_D=-1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
Zero Gate Voltage Drain
I_DSS
Current
On-State Drain Current(1)
I_D(on)
-1
Static Drain-Source On-State R_DS(on)
Resistance (1)
20 nA
-0.5 µA
-100 µA
A
5
Ω
V_GS=± 20V, V_DS=0V
V_DS=-60 V, V_GS=0
V_DS=-48 V, V_GS=0V, T=125°C(2)
V_DS=-18 V, V_GS=-10V
V_GS=-10V,I_D=-500mA
Forward Transconductance g_fs
150
(1)(2)
mS V_DS=-18V,I_D=-500mA
Input Capacitance (2)
C_iss
Common Source Output
C_oss
Capacitance (2)
100 pF
60 pF
V_DS=-18V, V_GS=0V, f=1MHz
Reverse Transfer
C_rss
20 pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t_d(on)
t_r
t_d(off)
t_f
7
ns
15
ns
V_DD≈-18V, I_D=-500mA
12 ns
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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