ZVP0545G Datasheet, PDF (1/1 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 98
FEATURES
* 450 Volt V_DS
* R_DS(on)=150Ω
ZVP0545G
D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
S
D
G
VALUE
-450
-75
-400
± 20
2
-55 to +150
UNIT
V
mA
mA
V
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV_DSS -450
V
I_D=-1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th) -1.5 -4.5 V
I_D=-1mA, V_DS= V_GS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I_GSS
I_DSS
20
nA V_GS=± 20V, V_DS=0V
-20 µA V_DS=-450 V, V_GS=0
-2
mA V_DS=-360 V, V_GS=0V,
T=125°C(2)
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
I_D(on)
-100
mA V_DS=-25 V, V_GS=-10V
R_DS(on)
150 Ω
V_GS=-10V,I_D=-50mA
Forward Transconductance g_fs
40
(1)(2)
mS V_DS=-25V,I_D=-50mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
C_iss
C_oss
120 pF
20 pF
V_DS=-25 V, V_GS=0V, f=1MHz
Reverse Transfer
C_rss
5
pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t_d(on)
t_r
t_d(off)
t_f
10 ns
15
ns
V_DD ≈-25V, I_D=-50mA
15 ns
20 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator