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| ZVN4310A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 â MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on) = 0.5â¦
* Spice model available
ZVN4310A
ABSOLUTE MAXIMUM RATINGS.
D
G
S
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
100
V
Continuous Drain Current at Tamb=25°C
ID
0.9
A
Practical Continuous Drain Current at
IDP
Tamb=25°C
1
A
Pulsed Drain Current
IDM
12
A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
850
mW
Practical Power Dissipation at Tamb=25°C*
Ptotp
1.13
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
BVDSS 100
Breakdown Voltage
V
ID=1mA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th)
1
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
On-State Drain
Current(1)
ID(on)
9
20
nA VGS=± 20V, VDS=0V
10
µA VDS=100V, VGS=0
100 µA VDS=80V, VGS=0V, T=125°C(2)
A
VDS=25 V, VGS=10V
Static Drain-Source
On-State Resistance
(1)
RDS(on)
0.36 0.5 â¦
0.48 0.65 â¦
VGS=10V,ID=3A
VGS=5V, ID=1.5A
Forward
gfs
600
Transconductance
(1)(2)
mS VDS=25V,ID=3A
3-393
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