ZVN4206AV Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4206AV
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt V_DS
* R_DS(on)= 1Ω
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
ABSOLUTE MAXIMUM RATINGS.
D
G
S
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
Continuous Drain Current at T_amb=25°C
I_D
Pulsed Drain Current
I_DM
Gate-Source Voltage
V_GS
Power Dissipation at T_amb=25°C
P_tot
Continuous Body Diode Current at T_amb
I_SD
=25°C
60
V
600
mA
8
A
± 20
V
700
mW
600
mA
Avalanche Current – Repetitive
I_AR
600
mA
Avalanche Energy – Repetitive
E_AR
15
mJ
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV_DSS 60
V
I_D=1mA, V_GS=0V
Gate-Source Threshold Voltage V_GS(th) 1.3 3
V
I_D=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
100 nA V_GS=± 20V, V_DS=0V
Zero Gate Voltage Drain
I_DSS
Current
10
µA V_DS=60V, V_GS=0
100 µA V_DS=48V, V_GS=0V, T=125°C(2)
On-State Drain Current(1)
I_D(on)
3
A
V_DS=25V, V_GS=10V
Static Drain-Source On-State R_DS(on)
Resistance (1)
1
Ω
1.5 Ω
V_GS=10V,I_D=1.5A
V_GS=5V,I_D=.0.5A
Forward Transconductance(1)(2) g_fs
300
mS V_DS=25V,I_D=1.5A
Input Capacitance (2)
C_iss
100 pF
Common Source Output
Capacitance (2)
C_oss
60
pF V_DS=25V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance (2) C_rss
Turn-On Delay Time (2)(3)
t_d(on)
Rise Time (2)(3)
t_r
Turn-Off Delay Time (2)(3)
t_d(off)
Fall Time (2)(3)
t_f
20 pF
8
ns
12
ns
V_DD ≈25V, I_D=1.5A,V_GEN=10V
12 ns
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator