ZVN2535A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V_DS
R_DS(on)=35Ω
ZVN2535A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
D
G
S
E-Line
TO92 Compatible
VALUE
350
90
1
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS 350
V
I_D=1mA, V_GS=0V
Gate-Source
Threshold Voltage
V_GS(th)
1
3
V
ID=1mA, V_DS= V_GS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
I_GSS
I_DSS
20
nA V_GS=± 20V, V_DS=0V
10
µA V_DS=350V, V_GS=0
400 µA V_DS=280V, V_GS=0V,
T=125°C(2)
On-State Drain Current(1)
I_D(on)
250
Static Drain-Source On-State R_DS(on)
35
Resistance (1)
mA V_DS=25V, V_GS=10V
Ω
V_GS=10V,I_D=100mA
Forward Transconductance (1)( g_fs
100
2)
mS V_DS=25V,I_D=100mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
C_iss
C_oss
70 pF
10
pF V_DS=25 V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance C_rss
(2)
4
pF
Turn-On Delay Time (2)(3)
t_d(on)
7
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
t_r
t_d(off)
7
ns
V_DD ≈25V, I_D=100mA
16 ns
Fall Time (2)(3)
t_f
10 ns
(
3-372
1
)
Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%