ZVN2110G Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 7
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
ZVN2110G
D
S
PARTMARKING DETAIL - ZVN2110
COMPLEMENTARY TYPE - ZVP2110G
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
100
V
Continuous Drain Current at T_amb=25°C
I_D
500
mA
Pulsed Drain Current
I_DM
6
A
Gate Source Voltage
V_GS
± 20
V
Power Dissipation at T_amb=25°C
P_tot
2
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
BV_DSS
V_GS(th)
I_GSS
I_DSS
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
I_D(on)
R_DS(on)
100
V
0.8
2.4 V
0.1 20 nA
1 µA
100 µA
1.5 2
A
4Ω
I_D=1mA, V_GS=0V
I_D=1mA, V_DS= V_GS
V_GS=± 20V, V_DS=0V
V_DS=100V, V_GS=0
V_DS=80V, V_GS=0V, T=125°C(2)
V_DS=25V, V_GS=10V
V_GS=10V, I_D=1A
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
g_fs
C_iss
C_oss
250 350
mS
59 75 pF
16 25 pF
V_DS=25V, I_D=1A
V_DS=25 V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance (2) C_rss
4 8 pF
Turn-On Delay Time (2)(3)
t_d(on)
4 7 ns
Rise Time (2)(3)
t_r
4 8 ns
Turn-Off Delay Time (2)(3)
t_d(off)
8 13 ns
Fall Time (2)(3)
t_f
8 13 ns
DRAIN-SOURCE DIODE CHARACTERISTICS
V_DD ≈25V, I_D=1A
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Forward Voltage (1) V_SD
0.82
V
I_S=0.32A, V_GS=0
Reverse Recovery Time
T_RR
112
ns I_F=0.32A, V_GS=0, I_R=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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