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| ZVN1409A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 â MARCH 94
FEATURES
* 90 Volt VDS
* Low input capacitance
* Fast switching
ZVN1409A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
90
10
40
± 20
625
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
90
V
ID=0.1mA, VGS=0V
Gate-Source Breakdown
Voltage
VGS(th)
0.8
2.4
V
ID=0.1mA, VDS= VGS
Gate Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
100 nA
1
µA
100 (2) µA
VGS=± 20V, VDS=0V
VDS=90V, VGS=0V
VDS=72V, VGS=0V,
T=125°C
On State Drain Current (1)
ID(on)
10
Static Drain Source On State RDS(on)
Resistance (1)
mA
VDS=25 V, VGS=10V
250 â¦
VGS=10V,ID=5mA
Forward Transconductance (1)( gfs
2
2)
mS VDS=25V,ID=10mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
6.5 pF
3
pF
VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer Capacitance Crss
(2)
0.65 pF
Turn-On Delay Time (2)(3)(4) td(on)
0.3 ns
Rise Time (2)(3)(4)
Turn-Off Delay Time (2)(3)(4)
tr
td(off)
0.5 ns
0.35 ns
VDD â25V, ID=5mA
Fall Time (2)(3)(4)
tf
0.5 ns
3-358
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1
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