ZVN0535A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V_DS
* R_DS(on)=50Ω
ZVN0535A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
DG
S
E-Line
TO92 Compatible
VALUE
350
90
600
± 20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV_DSS 350
V
I_D=1mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th) 1
3
V
ID=1mA, V_DS= V_GS
Gate-Body Leakage
I_GSS
Zero Gate Voltage Drain
I_DSS
Current
20
nA V_GS=± 20V, V_DS=0V
10
µA V_DS=350 V, V_GS=0
400 µA V_DS=280 V, V_GS=0V,
T=125°C(2)
On-State Drain Current(1)
I_D(on)
150
Static Drain-Source On-State R_DS(on)
50
Resistance (1)
mA V_DS=25 V, V_GS=10V
Ω
V_GS=10V,I_D=100mA
Forward Transconductance(1)(2g_fs
100
)
mS V_DS=25V,I_D=100mA
Input Capacitance (2)
C_iss
Common Source Output
C_oss
Capacitance (2)
70 pF
10
pF V_DS=25 V, V_GS=0V, f=1MHz
Reverse Transfer Capacitance C_rss
(2)
4
pF
Turn-On Delay Time (2)(3)
t_d(on)
7
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
t_r
t_d(off)
7
ns _{VDD≈25V, ID=100mA}
16 ns
Fall Time (2)(3)
t_f
10 ns
3-353
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