ZVN0117TA Datasheet, PDF (1/1 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – APRIL 94
FEATURES
* 170 Volt BV_DS
APPLICATIONS
* Telephone handsets
ZVN0117TA
DG
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
E-Line
TO92 Compatible
VALUE
170
160
2
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown BV_DSS 170
Voltage
V
I_D=10µA, V_GS=0V
Gate-Body Leakage
I_GSS
Zero Gate Voltage Drain
I_DSS
Current
100 nA V_GS=± 15V, V_DS=0V
10
µA V_DS=170 V, V_GS=0
50
µA V_DS=140 V, V_GS=0V,
T=50°C(2)
On-State Drain Current(1) I_D(on)
100
Static Drain-Source
R_DS(on)
23
On-State Resistance (1)
23
mA V_DS=3V, V_GS=3.3V
Ω
V_GS=3.3V,I_D=100mA
Ω
V_GS=3V,I_D=30mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
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