ZUMT817 Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT323 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS ZUMT817-25 - T7
ZUMT817-40 - T23
COMPLEMENTARY TYPES
ZUMT817-25 - ZUMT807-25
ZUMT817-40 - ZUMT807-40– T7
ZUMT817-25
ZUMT817-40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
I_BM
P_tot
T_j:T_stg
VALUE
50
45
5
1
500
100
200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
I_CBO
I_EBO
V_CE(sat)
0.1
A V_CB=20V, I_E=0
5

A V_CB=20V, I_E=0, T_amb=150°C
10

A
V_EB=5V, I_C=0
700 mV I_C=500mA, I_B=50mA*
Base-Emitter
Turn-on Voltage
V_BE(on)
1.2 V
I_C=500mA, V_CE=1V*
Static Forward
h_FE
Current Transfer Ratio
-25
-40
Transition
f_T
Frequency
100
600
I_C=100mA, V_CE=1V*
40
I_C=500mA, V_CE=1V*
160
400
I_C=100mA, V_CE=1V*
250
600
I_C=100mA, V_CE=1V*
200
MHz I_C=10mA, V_CE=5V
f=35MHz
Collector-base
Capacitance
C_obo
5.0
pF I_E=I_e=0, V_CB=10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle  2%