ZUMT807 Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT323 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS ZUMT807-25 - T8
ZUMT807-40 - T24
COMPLEMENTARY TYPES ZUMT807-25 - ZUMT817-25
ZUMT807-40 - ZUMT817-40
ZUMT807-25
ZUMT807-40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
I_BM
P_tot
T_j:T_stg
VALUE
-50
-45
-5
-1
-500
-100
-200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
I_CBO
I_EBO
V_CE(sat)
-0.1
A
-5
A
-10
A
-700 mV
V_CB=-20V, I_E=0
V_CB=-20V, I_E=0, T_amb=150°C
V_EB=-5V, I_C=0
I_C=-500mA, I_B=-50mA*
Base-Emitter
Turn-on Voltage
V_BE(on)
-1.2 V
I_C=-500mA, V_CE=-1V*
Static Forward Current h_FE
Transfer Ratio
-25
-40
Transition
f_T
Frequency
100
600
I_C=-100mA, V_CE=-1V*
40
I_C=-500mA, V_CE=-1V*
160
400
I_C=-100mA, V_CE=-1V*
250
600
I_C=-100mA, V_CE=-1V*
100
MHz I_C=-10mA, V_CE=-5V
f=35MHz
Collector-base
Capacitance
C_obo
8.0
pF I_E=I_e=0, V_CB=-10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle  2%