ZUMT591 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (I_C)
APPLICATIONS
* Ideally suited for space / weight critical applications
ZUMT591
C
E
B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
P_tot
T_j:T_stg
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO
-80
V
I_C=-100µA, I_E=-0
Collector-Emitter
Breakdown Voltage
V_CEO(sus)
-60
V
I_C=-10mA*, I_B=-0
Emitter-Base Breakdown V_(BR)EBO
-5
Voltage
V
I_E=-100µA, I_C=-0
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
I_CBO
I_CES
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
-100 nA
-100 nA
-100 nA
-0.3
V
-0.6
V
-1.2
V
V_CB=-60V
VCE=-60V
V_EB=-4V, I_C=-0
I_C=-500mA, I_B=-50mA*
I_C=-1A, I_B=-100mA*
I_C=-1A, I_B=-100mA*
Base-Emitter
Turn On Voltage
V_BE(on)
-1.0
V
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
IC=-1A, V_CE=-5V*