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| ZUMT491 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |||
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SOT323 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 â MARCH 2007
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (IC)
APPLICATIONS
* Ideally suited for space / weight critical applications
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector Base
Breakdown Voltage
V(BR)CBO
80
Collector Emitter
Breakdown Voltage
VCEO(sus) 60
Emitter Base
Breakdown Voltage
V(BR)EBO
5
Collector Cut Off
ICBO
100
Current
Collector Cut Off
ICES
100
Current
Emitter Cut Off Current IEBO
Collector Emitter
Saturation Voltage
VCE(sat)
100
0.25
0.50
Base Emitter
VBE(sat)
1.1
Saturation Voltage
Base Emitter
VBE(on)
1.0
Turn On Voltage
ZUMT491
C
E
B
SOT323
VALUE
80
60
5
2
1
200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
UNIT
V
CONDITIONS.
IC=100µA, IE=0
V
IC=10mA*, IB=0
V
IE=100µA, IC=0
nA
VCB=60V
nA
VCE=60V
nA
VEB=4V, IC=0
V
IC=500mA, IB=50mA*
V
IC=1A, IB=100mA*
V
IC=1A, IB=100mA*
V
IC=1A, VCE=5V*
* Measured under pulsed conditions. Pulse width 300µS. Duty cycle Õ
2%.
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