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| ZUMT413 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR AVALANCHE TRANSISTOR | |||
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SOT323 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 1 â DECEMBER 1998
FEATURES
*
Avalanche mode operation
*
50A Peak avalanche current
*
Low inductance packaging
APPLICATIONS
*
Laser LED drivers
*
Fast edge generation
*
High speed pulse generators
PARTMARKING DETAIL - T13
ZUMT413
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (25ns Pulse Width)
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj:Tstg
VALUE
150
50
6
100
50
330
-55 to +150
UNIT
V
V
V
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CES
150
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus)
50
V
IC=10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
6
V
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1
µA
0.1
µA
0.15 V
VCB=120V
VEB=4V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.8
V
IC=10mA, IB=1mA
Current in Second
IUSB
22
Breakdown (Pulsed)
31
Static Forward Current hFE
50
Transfer Ratio
A
VC=110V, CCE=4.7nF*
A
VC=130V, CCE=4.7nF*
IC=10mA, VCE=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB)monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
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