ZTX956 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 – JUNE 94
FEATURES
* 2 Amps continuous current
* Up to 5 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics up to 2 Amps
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
ZTX956
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
-220
V
Collector-Emitter Voltage
V_CEO
-200
V
Emitter-Base Voltage
V_EBO
-6
V
Peak Pulse Current
I_CM
-5
A
Continuous Collector Current
I_C
-2
A
Practical Power Dissipation*
P_totp
1.58
W
Power Dissipation at T_amb=25°C
P_tot
1.2
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO -220 -300
V
I_C=-100µA
Collector-Emitter Breakdown V_(BR)CER
Voltag
-220 -300
V
IC=-1µA, RB ≤1KΩ
Collector-Emitter Breakdown V_(BR)CEO
Voltage
-200 -240
V
I_C=-10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO
-6
-8
V
I_E=-100µA
Collector Cut-Off Current
I_CBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_CER
R ≤1KΩ
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
-50 nA
-1
µA
-50 nA
-1
µA
-10 nA
-30 -50 mV
-110 -150 mV
-150 -250 mV
-920 -1050 mV
V_CB=-200V
V_CB=-200V, T_amb=100°C
V_CB=-200V
V_CB=-200V, T_amb=100°C
V_EB=-6V
I_C=-100mA, I_B=-10mA*
I_C=-1A, I_B=-100mA*
I_C=-2A, I_B=-400mA*
I_C=-2A, I_B=-400mA
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