ZTX853 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 100 Volt V_CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P_tot=1.2 Watts
ZTX853
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
200
V
Collector-Emitter Voltage
V_CEO
100
V
Emitter-Base Voltage
V_EBO
6
V
Peak Pulse Current
I_CM
10
A
Continuous Collector Current
I_C
4
A
Practical Power Dissipation*
P_totp
1.58
W
Power Dissipation at T_amb=25°C
P_tot
1.2
W
Operating and Storage Temperature Range
T_j:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO 200 300
V
I_C=100µA
Collector-Emitter Breakdown V_(BR)CER 200 300
Voltag
V
IC=1µA, RB ≤1KΩ
Collector-Emitter Breakdown V_(BR)CEO 100 120
Voltage
V
I_C=10mA*
Emitter-Base Breakdown
V_(BR)EBO
6
8
Voltage
V
I_E=100µA
Collector Cut-Off Current
I_CBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_CER
R ≤1KΩ
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
50
nA
V_CB=150V
1
µA
V_CB=150V, T_amb=100°C
50
nA
V_CB=150V
1
µA
V_CB=150V, T_amb=100°C
10
nA
V_EB=6V
14
50
mV I_C=0.1A, I_B=5mA
100 150 mV I_C=2A, I_B=100mA
160 200 mV I_C=4A, I_B=400mA*
960 1100 mV I_C=4A, I_B=400mA*
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