ZTX796A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 200 Volt V_CEO
* Gain of 250 at I_C=0.3 Amps
* Very low saturation voltage
ZTX796A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T_amb=25°C
derate above 25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_totp
P_tot
-200
V
-200
V
-5
V
-1
A
-0.5
A
1.5
W
1
W
5.7
mW/°C
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V_(BR)CBO -200
V
I_C=-100µA
Collector-Emitter Breakdown V_(BR)CEO -200
Voltage
V
I_C=-10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO -5
V
I_E=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_CBO
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
-0.1 µA
-0.1 µA
-0.2 V
-0.3 V
-0.3 V
-0.95 V
V_CB=-150V
V_EB=-4V
I_C=-50mA, I_B=-2mA*
I_C=-100mA, I_B=-5mA*
I_C=-200mA, I_B=-20mA*
I_C=-200mA, I_B=-20mA*
Base-Emitter
Turn-On Voltage
V_BE(on)
-0.67
V
IC=-200mA, V_CE=-10V*
Static Forward Current
h_FE
300
800
I_C=-10mA, V_CE=-10V*
Transfer Ratio
300
I_C=-100mA, V_CE=-10V*
250
I_C=-300mA, V_CE=-10V*
100
I_C=-400mA, V_CE=-10V*
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