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| ZTX776 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â JULY 94
FEATURES
* 200 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
ZTX776
REFER TO ZTX755 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
derate above Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
-200
-200
-5
-2
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -200
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -200
V
IC=-10mA, IB=0*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-100µA, IC=0
Collector Cut-Off
ICBO
Current
-100 nA
VCB=-160V, IE=0
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
-100 nA
-0.5
V
-0.5
V
-1.1
V
VEB=-4V, IC=0
IC=-500mA, IB=-50mA*
IC=-1A, IB=-200mA*
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0
V
IC=-500mA, VCE=-5V*
Static Forward Current hFE
50
Transfer Ratio
50
20
Transition
Frequency
fT
30
MHz
IC=-10mA, VCE=-5V
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
20
pF
VCB=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-270
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