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| ZTX754 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 Â JULY 94
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
ZTX754
ZTX755
C
B
E
E-Line
TO92 Compatible
ZTX754
ZTX755
-125
-150
-125
-150
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX754
ZTX755 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -125
-150
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -125
-150
V
IC=-10mA, IB=0*
Emitter-Base
V(BR)EBO -5
-5
V
IE=-100µA, IC=0
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
-100
nA VCB=-100V, IE=0
-100 nA VCB=-125V, IE=0
-100
-100 nA VEB=-3V, IC=0
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
-0.5
-0.5 V
IC=-500mA, IB=-50mA*
-0.5
-0.5 V
IC=-1A, IB=-200mA*
-1.1
-1.1 V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.0
-1.0 V
IC=-500mA, VCE=-5V*
Static Forward
hFE
50
50
Current Transfer Ratio
50
50
20
20
IC=-10mA, VCE=-5V
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
Transition Frequency fT
30
30
MHz IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance Cobo
20
20
pF
VCB=-20V, f=1MHz
3-263
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