ZTX750 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 60 Volt V_CEO
* 2 Amp continuous current
* Low saturation voltage
* P_tot= 1 Watt
ZTX750
ZTX751
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL ZTX750 ZTX751
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T_amb=25°C
derate above 25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
-60
-80
-45
-60
-5
-6
-2
1
5.7
V
V
V
A
A
W
mW/°C
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
ZTX750
ZTX751
SYMBOL _{MIN. TYP. MAX. MIN. TYP. MAX.} UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
V_(BR)CBO -60
V_(BR)CEO -45
V_(BR)EBO -5
I_CBO
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
I_EBO
V_CE(sat)
V_BE(sat)
-80
-60
-5
-0.1
-10
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9 -1.25
V
V
V
µA
-0.1 µA
µA
-10 µA
-0.1 µA
-0.15 -0.3 V
-0.28 -0.5 V
-0.9 -1.25 V
I_C=-100µA
I_C=-10mA
I_E=-100µA
V_CB=-45V
V_CB=-60V
V_CB=-45V,T_amb=100°C
V_CB=-60V,T_amb=100°C
V_EB=-4V
I_C=-1A, I_B=-100mA
I_C=-2A, I_B=-200mA
I_C=-1A, I_B=-100mA
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