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| ZTX658_02 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |||
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NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 â APRIL 2002
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot=1 Watt
ZTX658
APPLICATIONS
* Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
400
400
5
1
500
1
5.7
-55 to +200
UNIT
V
V
V
A
mA
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 400
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO) 400
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA
Collector Cut-Off
Current
ICBO
100 nA
VCB=320V
Collector Cut-Off
Current
ICBO
100 nA
VCE=320V
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
100 nA
0.3
V
0.25 V
0.5
V
0.9
V
VEB=4V
IC=20mA, IB=1mA
IC=50mA, IB=5mA*
IC=100mA, IB=10mA*
IC=100mA, IB=10mA*
Base-Emitter
Turn On Voltage
VBE(on)
0.9
V
IC=100mA, VCE=5V*
Static Forward Current hFE
50
Transfer Ratio
50
40
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
3-229
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