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| ZTX654 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 Â JULY 94
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
ZTX654
ZTX655
C
B
E
E-Line
TO92 Compatible
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
ZTX654 ZTX655
125
150
125
150
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX654
ZTX655
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO 125
150
V
IC=100µA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO 125
150
V
IC=10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO 5
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
5
100
100
V
nA
100 nA
100 nA
IE=100µA, IC=0
VCB=100V, IE=0
VCB=125V, IE=0
VEB=3V, IC=0
Collector-Emitter
VCE(sat)
0.5
0.5 V
IC=500mA, IB=50mA*
Saturation Voltage
0.5
0.5 V
IC=1A, IB=200mA*
Base-Emitter
VBE(sat)
1.1
1.1 V
IC=500mA, IB=50mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward
hFE
50
Current Transfer
50
Ratio
20
Transition
Frequency
fT
30
Output Capacitance Cobo
1.0
50
50
20
30
20
1.0 V
IC=500mA, VCE=5V*
MHz
IC=10mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=10mA, VCE=20V
f=20MHz
20
pF
VCB=20V, f=1MHz
3-225
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