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| ZTX602 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | |||
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 80 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
ZTX602
ZTX603
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
ZTX602 ZTX603
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb = 25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptot
80
100
60
80
10
4
1
1
5.7
V
V
V
A
A
W
mW/ °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX602
ZTX603 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 80
Breakdown Voltage
100
V
IC=100µA
Collector-Emitter
V(BR)CEO 60
80
V
IC=10mA*
Breakdown Voltage
Emitter-Base
V(BR)EBO 10
10
V
IE=100µA
Breakdown Voltage
Collector Cut-Off
ICBO
Current
0.01
10
µA
0.01 µA
µA
10
µA
VCB=60V
VCB=80V
VCB=60V,Tamb=100°C
VCB=80V,Tamb=100°C
Emitter Cut-Off
IEBO
Current
0.1
0.1 µA VEB=8V
Colllector-Emitter ICES
Cut-Off Current
10
µA
VCES=60V
10
µA
VCES=80V
Collector-Emitter
VCE(sat)
1.0
1.0 V
IC=400mA,
Saturation Voltage
1.0
1.0 V
IB=0.4mA*
IC=1A, IB=1mA*
Base-Emitter
VBE(sat)
1.8
1.8 V
IC=1A, IB=1mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
3-209
1.7 V
IC=1A, VCE=5V*
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