ZTX576 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 200 Volt V_CEO
* 1 Amp continuous current
* P_tot= 1 Watt
ZTX576
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
E-Line
TO92 Compatible
VALUE
-200
-200
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO -200
V
I_C=-100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO -200
V
I_C=-10mA*
Emitter-Base
Breakdown Voltage
V_(BR)EBO -5
V
I_E=-100µA
Collector Cut-Off
I_CBO
Current
-0.1 µA
V_CB=-160V
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
-0.1 µA
-0.3 V
V_EB=-4V
I_C=-100mA, I_B=-10mA*
Base-Emitter
Saturation Voltage
V_BE(sat)
-1
V
I_C=-100mA, I_B=-10mA*
Base-Emitter
Turn-on Voltage
V_BE(on)
-1
V
IC=-100mA, V_CE=-10V*
Static Forward Current h_FE
50
Transfer Ratio
50
Transition
Frequency
f_T
100
I_C=-10mA, V_CE=-10V*
300
I_C=-300mA, V_CE=-10V*
MHz I_C=-50mA, V_CE=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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