ZTX552 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 100 Volt V_CEO
* 1 Amp continuous current
* P_tot=1 Watt
ZTX552
ZTX553
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T_amb=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
C
B
E
E-Line
TO92 Compatible
ZTX552 ZTX553
-100
-120
-80
-100
-5
-2
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL ZTX552
ZTX553
UNIT
MIN. MAX. MIN. MAX.
Collector-Base
V_(BR)CBO -100
-120
V
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
V_CEO(sus) -80
-100
V
Emitter-Base
V_(BR)EBO -5
-5
V
Breakdown Voltage
Collector Cut-Off
I_CBO
Current
-0.1
µA
-0.1
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
-0.1
-0.25
-0.1 µA
-0.25 V
Base-Emitter
V_BE(sat)
-1.1
-1.1 V
Saturation Voltage
Base-Emitter
V_BE(on)
-1.0
-1.0 V
Turn-onn Voltage
Static Forward Current h_FE
Transfer Ratio
40
150 40
200
10
10
Transition Frequency f_T
150
150
MHz
Output Capacitance C_obo
12
12
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-196
CONDITIONS.
I_C=-100µA
I_C=-10mA
I_E=-100µA
V_CB=-80V
V_CB=-100V
V_EB=-4V
I_C=-150mA, I_B=-15mA*
I_C=-150mA, I_B=-15mA*
I_C=-150mA, V_CE=-10V*
I_C=-150mA, V_CE=-10V*
I_C=-1A, V_CE=-10V*
I_C=-50mA, V_CE=-10V
f=100MHz
V_CB=-10V, f=1MHz