ZTX541 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR

PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 – MARCH 94
ZTX541
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j:T_stg
E-Line
TO92 Compatible
VALUE
-100
-100
-5
-100
300
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO -100
V
I_C=-100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO -100
V
I_C=-10µA
Emitter-Base
Breakdown Voltage
V_(BR)EBO -5
V
I_E=-100µA
Collector Cut-Off
I_CBO
Current
-0.5 µA
V_CB=-80V
Emitter Cut-Off Current I_CER
Collector-Emitter
Saturation Voltage
V_CE(sat)
-0.5 µA
-10
µA
-0.5 V
V_CE=-80V, R_BE=50KΩ
V_CE=-80V, R_BE=50KΩ
I_C=-2mA, I_B=-0.1mA
Base-Emitter
Saturation Voltage
V_BE(sat)
-1.0 V
I_C=-2mA, I_B=-0.1mA
Static Forward Current h_FE
30
Transfer Ratio
I_C=-2mA, V_CE=-1V
Transition Frequency f_T
80
MHz I_C=-5mA, V_CE=-5V
f=60MHz
Output Capacitance
C_obo
10
pF
V_CB=-6V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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