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| ZTX537C Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 Â MARCH 94
ZTX537C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-50
-45
-5
-1
-800
750
-55 to +175
UNIT
V
V
V
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -50
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -45
V
IC=-100µA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA, IE=0
Collector Cut-Off
ICBO
Current
-100 nA
VCB=-45V
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2 µA
-0.7 V
VEB=-4V
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(on)
-1.2 V
IC=-300mA, VCE=-1V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
250
630
IC=-100mA, VCE=-1V*
170
IC=-300mA, VCE=-1V*
200
MHz IC=-10mA, VCE=-5V
f=50MHz
Output Capacitance Cobo
12
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-188
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