ZTX500 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR

PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 1 – MARCH 94
ZTX500
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j:T_stg
E-Line
TO92 Compatible
VALUE
-25
-25
-5
-500
300
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V_(BR)CBO -25
Collector-Emitter
Sustaining Voltage
V_CEO(sus) -25
Emitter-Base
Breakdown Voltage
V_(BR)EBO -5
Collector Cut-Off
I_CBO
-0.2
Current
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
-0.2
-0.35
Base-Emitter
V_BE(sat)
-0.65
-1
Saturation Voltage
Static Forward Current h_FE
50
300
Transfer Ratio
Transition Frequency f_T
150
Output Capacitance
Noise Figure
C_obo
N
6
7
UNIT
V
V
V
µA
µA
V
V
MHz
pF
dB
CONDITIONS.
I_C=-10µA
I_C=-5mA
I_E=-10µA
V_CB=-25V
V_EB=-4V
I_C=-50mA, I_B=-5mA*
I_C=-10mA, I_B=-1mA*
I_C=-10mA, V_CE=-6V*
I_C=-10mA, V_CE=-6V
f=100MHz
V_CB=-6V, f=1MHz
I_C=-100µA, R_S=1.5KΩ
f=1KHz
3-184