ZTX413 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR AVALANCHE TRANSISTOR

NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 – MARCH 94
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
ZTX413
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (25ns Pulse Width)
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j:T_stg
C
B
E
E-Line
TO92 Compatible
VALUE
150
50
6
200
50
500
-55 to +200
UNIT
V
V
V
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V_(BR)CES
150
V
I_C=100µA
Collector-Emitter
Breakdown Voltage
V_CEO(sus) 50
V
I_C=10mA
Emitter-Base
Breakdown Voltage
V_(BR)EBO
6
V
I_E=100µA
Collector Cut-Off Current I_CBO
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
0.1
µA
0.1
µA
0.15 V
V_CB=120V
V_EB=4V
I_C=10mA, I_B=1mA
Base-Emitter
Saturation Voltage
V_BE(sat)
0.8
V
I_C=10mA, I_B=1mA
Current in Second
I_USB
22
Breakdown (Pulsed)
31
A
VC=110V, C_CE=4.7nF*
A
V_C=130V, C_CE=4.7nF*
Static Forward Current h_FE
50
Transfer Ratio
I_C=10mA, V_CE=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I_(USB)monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
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