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| ZTX337C Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 Â MARCH 94
ZTX337C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IB
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
50
45
5
100
800
750
-55 to +175
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50
V
IC=100µA
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
V(BR)CES 45
V(BR)EBO 5
V
IC=100µA
V
IE=100µA
Collector Cut-Off
ICBO
Current
100 nA
VCB=45V, IE=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.7 V
IC=500mA, IB=50mA*
Base-Emitter Turn On VBE(on)
Voltage
1.2 V
IC=300mA,VCE=1V*
Static Forward Current hFE
Transfer
Transition
fT
Frequency
250
630
IC=100mA, VCE=1V*
170
IC=300mA, VCE=1V*
200
MHz IC=10mA, VCE=5V
f=50MHz
Output Capacitance
Cobo
12
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-163
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