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| ZTX325 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR RF TRANSISTOR | |||
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NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 Â MARCH 94
FEATURES
* High fT, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
ZTX325
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Mean Collector Current (Averaged over 100µs)
Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IAV
ICM
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
30
15
2.5
25
50
350
-55 to +200
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Sustaining Voltage
VCEO(SUS) 15
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA, IC=0
Collector Cut-Off Current ICBO
Emitter Cut-Off Current ICES
Static Forward Current hFE
25
Transfer Ratio
20
Transition Frequency
fT
1.0
1.3
Capacitance, Collector
CTC
Depletion Layer
10
nA VCB=15V, IE=0
10
µA VCE=15V, VBE=0
150
IC=2mA, VCE=1V*
125
IC=25mA, VCE=1V*
GHz IC=2mA, VCE=5V, f=400MHz
GHz IC=25mA, VCE=5V, f=400MHz
1.5 pF
VCB=10V, IE=Ie=0, f=1MHz
Capacitance, Emitter
CTE
Depletion Layer
2.0 pF VEB=0.5V, IC=Ic=0, f=1MHz
Feedback Capacitance
-Cre
0.85
pF
VCE=5V, IC=2mA, f=1MHz
Feedback Time Constant rbbÂCbÂc 2.0
12
ps
VCB=5V, -IE=2mA, f=10.7MHz
3-161
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